Scaling laws of the ripple morphology on Cu(110)

被引：169

作者：

Rusponi, S ^{[1
]}

Costantini, G

Boragno, C

Valbusa, U

机构：

[1] Univ Genoa, INFM, Unita Ric Genova, Genoa, Italy

[2] Univ Genoa, Dipartimento Fis, CNR, Ctr Fis Superfici & Basse Temp, Genoa, Italy

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.81.4184

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The evolution of the Cu(110) surface morphology during low temperature (180 K) ion sputtering was studied as a function of the incident ion beam angle theta by means of scanning tunneling microscopy. The morphology was dominated by a ripple structure with the wave vector parallel or perpendicular to the direction of the incident beam. The time evolution of the interface shows that the ripple wavelength increases in time following a scaling law lambda proportional to t(z), with z = 0.26 +/- 0.02. These results are ascribed to the effect of a Schwoebel barrier on the interlayer diffusion of the recoiling atoms produced during ion sputtering.

引用

页码：4184 / 4187

页数：4

共 35 条

[31] Influence of O-2(+) energy, flux, and fluence on the formation and growth of sputtering-induced ripple topography on silicon [J].