In situ scanning tunneling microscopy in electrolyte solutions

被引:449
作者
Itaya, K [1 ]
机构
[1] Tohoku Univ, Dept Appl Chem, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1016/S0079-6816(98)00022-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Until recently, there had been only few in situ methods available for the structural determination of an electrode surface in solution at the atomic level. Now, several recent investigations have demonstrated scanning tunneling microscopy (STM) to be a powerful new technique for in situ characterization, with atomic resolution, of surfaces under potentiostatic control. The object of this review is to highlight some of the recent progress made, mainly, but not exclusively, in the author's laboratory, on in situ STM with atomic resolution. The review is focused on several selected topics, including structures of specifically adsorbed anions, underpotential deposition, adsorption of organic molecules, and electrochemical dissolution of metals and semiconductors. A combination of in situ STM and ex situ ultrahigh vacuum techniques has revealed detailed atomic structures of various adlayers, particularly iodine adlayers on Au, Ag, and Pc electrodes. It was recently demonstrated that aromatic molecules such as benzene adsorbed on Ph, Pt, and Cu can be clearly "seen" while the electrode is immersed in electrolytic solution. The atomic structures of semiconductor surfaces of Si, GaAs, and InP were successfully imaged in solution. Furthermore, it has been established that dynamic processes of electrochemical etching of metals and semiconductors can be followed by in situ STM. The work on semiconductors may well form the basis of development of a technology for preparing atomically flat substrate surfaces, which are expected to be required by the semiconductor industry of the next generation.
引用
收藏
页码:121 / 247
页数:127
相关论文
共 308 条
[71]   THE ELECTROCHEMICAL-BEHAVIOR OF N-TYPE SILICON (111)-SURFACES IN FLUORIDE CONTAINING AQUEOUS-ELECTROLYTES [J].
GERISCHER, H ;
LUBKE, M .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1987, 91 (04) :394-398
[72]  
GERISCHER H, 1981, J ELECTROANAL CHEM, V119, P41, DOI 10.1016/S0022-0728(81)80122-2
[73]   Electrochemical applications of in situ scanning probe microscopy [J].
Gewirth, AA ;
Niece, BK .
CHEMICAL REVIEWS, 1997, 97 (04) :1129-1162
[74]  
GEWIRTH AA, 1995, NATO ASI SERIES, V288
[75]   BIAS-DEPENDENT ETCHING OF SILICON IN AQUEOUS KOH [J].
GLEMBOCKI, OJ ;
STAHLBUSH, RE ;
TOMKIEWICZ, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :145-151
[76]   PREPARATION OF AU SINGLE-CRYSTALS FOR STUDIES OF THE ECALE DEPOSITION OF CDTE [J].
GOETTING, LB ;
HUANG, BM ;
LISTER, TE ;
STICKNEY, JL .
ELECTROCHIMICA ACTA, 1995, 40 (01) :143-158
[77]   STM OBSERVATIONS OF THE UNDERPOTENTIAL DEPOSITION AND STRIPPING OF PB ON AU(111) UNDER POTENTIAL SWEEP CONDITIONS [J].
GREEN, MP ;
HANSON, KJ ;
CARR, R ;
LINDAU, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) :3493-3498
[78]   ELECTROCHEMICAL ATOMIC LAYER EPITAXY (ECALE) [J].
GREGORY, BW ;
STICKNEY, JL .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1991, 300 (1-2) :543-561
[79]  
GUNTHERODT HJ, 1991, SCANNING TUNNELING M, V1
[80]   SPECTROSCOPIC INVESTIGATIONS OF ADSORBATES AT THE METAL ELECTROLYTE INTERFACE USING SUM FREQUENCY GENERATION [J].
GUYOTSIONNEST, P ;
TADJEDDINE, A .
CHEMICAL PHYSICS LETTERS, 1990, 172 (05) :341-345