Structural and optical characterization of Sn incorporation in CuInS2 thin films grown by vacuum evaporation method

被引：24

作者：

Ben Rabeh, M ^{[1
]}

Zribi, M ^{[1
]}

Kanzari, M ^{[1
]}

Rezig, B ^{[1
]}

机构：

[1] ENIT, Lab Photovoltaique & Mat Semicond, Tunis 1002, Tunisia

来源：

MATERIALS LETTERS | 2005年 / 59卷 / 24-25期

关键词：

CuInS2; thin films; doping;

D O I：

10.1016/j.matlet.2005.05.045

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural. and optical properties of non-doped and Sn-doped CuInS2 thin films grown by double source thermal evaporation method were studied. Sn deposition time is taken between 0 and 5 min. The films were annealed at 250 degrees C for 2 h in vacuum after evaporation. The X-ray diffraction spectra indicated that polycrystalline CuInS2 films were successfully obtained after annealing and no Sn binary or ternary phases are observed for the Sri time depositions less or equal to 5 min. The Sn-doped samples after annealing have bandgap energy of 1.45-1.49 eV. Furthermore, we found that the Sn-doped CuInS2 thin films exhibit N-type conductivity after annealing. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：3164 / 3168

页数：5

共 26 条

[1] Structural and optical characterization of Sb-doped CuInS2 thin films grown by vacuum evaporation method [J].

Akaki, Y ;

Komaki, H ;

Yokoyama, H ;

Yoshino, K ;

Maeda, K ;

Ikari, T .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) :1863-1867

[2] Structural and optical characterization of RF reactively sputtered CuInS2 thin films [J].

He, YB ;

Polity, A ;

Alves, HR ;

Österreicher, I ;

Kriegseis, W ;

Pfisterer, D ;

Meyer, BK ;

Hardt, M .

THIN SOLID FILMS, 2002, 403 :62-65

[3] ELECTROPLATED CUINS2 AND CUINSE2 LAYERS - PREPARATION AND PHYSICAL AND PHOTOVOLTAIC CHARACTERIZATION [J].

HODES, G ;

ENGELHARD, T ;

CAHEN, D ;

KAZMERSKI, LL ;

HERRINGTON, CR .

THIN SOLID FILMS, 1985, 128 (1-2) :93-106

[4] ELECTRON-PARAMAGNETIC RESONANCE STUDY ON THE P-TYPE DOPING OF COPPER INDIUM DISULFIDE BY PHOSPHORUS IMPLANTATION [J].

HSU, YJ ;

HWANG, HL .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) :5798-5800

[5] GROWTH AND PROCESS IDENTIFICATION OF CUINS2 ON GAP BY CHEMICAL VAPOR-DEPOSITION [J].

HWANG, HL ;

SUN, CY ;

FANG, CS ;

CHANG, SD ;

CHENG, CH ;

YANG, MH ;

LIN, HH ;

TUWANMU, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :116-124

[6] GROWTH AND PROPERTIES OF SPUTTER-DEPOSITED CUINS2 THIN-FILMS [J].

HWANG, HL ;

CHENG, CL ;

LIU, LM ;

LIU, YC ;

SUN, CY .

THIN SOLID FILMS, 1980, 67 (01) :83-93

[7] Effect of substrate thermal gradient on as-grown CuInS2 properties [J].

Kanzari, M ;

Abaab, M ;

Rezig, B ;

Brunel, M .

MATERIALS RESEARCH BULLETIN, 1997, 32 (08) :1009-1015

[8]

KANZARI M, 1990, P 1 WORLD REN EN C L

[9] CULNS2 THIN-FILM HOMOJUNCTION SOLAR-CELLS [J].

KAZMERSKI, LL ;

SANBORN, GA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) :3178-3180

[10] OPTICAL-PROPERTIES OF LASER-EVAPORATED CUGASE2 FILMS NEAR AND ABOVE THE FUNDAMENTAL ABSORPTION-EDGE [J].

KINDYAK, VV ;

KINDYAK, AS ;

GREMENOK, VF ;

BODNAR, IV ;

RUD, YV ;

MEDVEDKIN, GA .

THIN SOLID FILMS, 1994, 250 (1-2) :33-36

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