Electric characteristics of poly(3-hexylthiophene) organic field-effect transistors fabricated on O2 plasma-treated substrates

被引：16

作者：

Yang, YS ^{[1
]}

Kim, SH ^{[1
]}

Lim, SC ^{[1
]}

Lee, JI ^{[1
]}

Lee, JH ^{[1
]}

Do, LM ^{[1
]}

Zyung, T ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 19期

关键词：

D O I：

10.1063/1.1626002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Soluble conjugated polymers such as poly(3-hexylthiophene) (P3HT) are very promising candidates for a cheap electronic device on various substrates. In this study we report the effects of O-2 plasma treatment of the substrates on the electrical properties of P3HT organic thin-film transistors and metal/insulator/organic semiconductor capacitors. Based on the results of a capacitance-voltage measurement, the effective charge density in the interface between P3HT and SiO2 layer treated by O-2 plasma for 30 s was approximately -18.3 nC/cm(2). When the period of O-2 plasma treatment was longer than 30 s, the field-effect mobility decreased since the amount of charge and the relaxation time constant of interface traps increased. (C) 2003 American Institute of Physics.

引用

页码：3939 / 3941

页数：3

共 16 条

[1] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility [J].

Bao, Z ;

Dodabalapur, A ;

Lovinger, AJ .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4108-4110

[2] Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode [J].

Campbell, AJ ;

Bradley, DDC ;

Werner, E ;

Brütting, W .

SYNTHETIC METALS, 2000, 111 :273-276

[3] Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J].

Dimitrakopoulos, CD ;

Purushothaman, S ;

Kymissis, J ;

Callegari, A ;

Shaw, JM .

SCIENCE, 1999, 283 (5403) :822-824

[4] ANALYTICAL APPROACH TOWARDS TRANSIENT PHENOMENA IN PHOTOCONDUCTORS [J].

JOSHI, NV .

PHYSICAL REVIEW B, 1983, 27 (10) :6272-6278

[5]

KAPOOR VJ, 1977, J APPL PHYS, V48, P739, DOI 10.1063/1.323664

[6] The physical chemistry of organic field-effect transistors [J].

Katz, HE ;

Bao, Z .

JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (04) :671-678

[7] Morphological origin of high mobility in pentacene thin-film transistors [J].

Laquindanum, JG ;

Katz, HE ;

Lovinger, AJ ;

Dodabalapur, A .

CHEMISTRY OF MATERIALS, 1996, 8 (11) :2542-&

[8] Electric contacts on conductive polymers: sodium on poly(3-hexylthiophene-2,5-diyl) [J].

Mikalo, RP ;

Schmeisser, D .

SYNTHETIC METALS, 2002, 127 (1-3) :273-277

[9] Lateral doping inhomogeneities as revealed by μ-NEXAFS and μ-PES [J].

Mikalo, RP ;

Hoffmann, P ;

Heller, T ;

Schmeisser, D .

SOLID STATE PHENOMENA, 1998, 63-4 :317-325

[10] Structures of polymer field-effect transistor: Experimental and numerical analyses [J].

Roichman, Y ;

Tessler, N .

APPLIED PHYSICS LETTERS, 2002, 80 (01) :151-153

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