Evolution with annealing treatments of the size of silicon nanocrystallites embedded in a SiNx matrix and correlation with optical properties

被引:25
作者
Molinari, M
Rinnert, H
Vergnat, M
Weisbecker, P
机构
[1] Univ Henri Poincare Nancy 1, CNRS, UMR 7556, Lab Phys Mat, F-54506 Vandoeuvre Les Nancy, France
[2] CNRS, UMR 7584, Ecole Mines Nancy, Lab Sci & Gen Mat Met, F-54502 Nancy, France
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 101卷 / 1-3期
关键词
amorphous silicon nitride alloys; reactive evaporation; X-ray diffraction; photoluminescence;
D O I
10.1016/S0921-5107(02)00715-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Amorphous silicon nitride alloys have been prepared by reactive evaporation of silicon under a flow of nitrogen ions. Photoluminescence in the visible domain can be observed in these alloys after annealing treatments. We have particularly studied the influence of the annealing time at 950 degreesC on the evolution of the photoluminescence, in correlation with the structural characterization performed by X-ray photoemission spectrometry, grazing-angle X-ray diffraction, infrared absorption spectrometry and Raman spectrometry. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:186 / 189
页数:4
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