1.5 μm GaInNAs semiconductor saturable absorber for passively modelocked solid-state lasers

被引：22

作者：

Rutz, A ^{[1
]}

Grange, R ^{[1
]}

Liverini, V ^{[1
]}

Haiml, M ^{[1
]}

Schön, S ^{[1
]}

Keller, U ^{[1
]}

机构：

[1] ETH, Dept Phys, Inst Quantum Elect, CH-8093 Zurich, Switzerland

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 06期

关键词：

D O I：

10.1049/el:20058272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fully self-starting and passively modelocking of a 1.5 mu m solid-state laser with a GaInNAs semiconductor saturable absorber mirror (SESAM) has been demonstrated for the first time. A saturation fluence of 20 mu J/cm(2), a modulation depth of 0.39% and a fast temporal decay of IS ps were measured. These well-suited nonlinear optical SESAM parameters allowed for self-starting and passive modelocking of a diode-pumped Er:Yb:glass laser at 1.534 mu m with a pulse duration of 5 ps at 61 MHz.

引用

页码：321 / 323

页数：3

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