1.5-μm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

被引：98

作者：

Okhotnikov, OG ^{[1
]}

Jouhti, T ^{[1
]}

Konttinen, J ^{[1
]}

Karirinne, S ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

OPTICS LETTERS | 2003年 / 28卷 / 05期

关键词：

D O I：

10.1364/OL.28.000364

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We present a new monolithic GaAs-based semiconductor saturable bsorber operating at 1.55 mum. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-mum wavelength range. (C) 2003 Optical Society of America.

引用

页码：364 / 366

页数：3

共 14 条

[1] Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm [J].

Choquette, KD ;

Klem, JF ;

Fischer, AJ ;

Blum, O ;

Allerman, AA ;

Fritz, IJ ;

Kurtz, SR ;

Breiland, WG ;

Sieg, R ;

Geib, KM ;

Scott, JW ;

Naone, RL .

ELECTRONICS LETTERS, 2000, 36 (16) :1388-1390

[2] Electrical and optical characteristics of n-type-doped distributed Bragg mirrors on InP [J].

Dias, IFL ;

Nabet, B ;

Kohl, A ;

Benchimol, JL ;

Harmand, JC .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (06) :763-765

[3] Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 μm wavelength regime [J].

Ellmers, C ;

Höhnsdorf, F ;

Koch, J ;

Agert, C ;

Leu, S ;

Karaiskaj, D ;

Hofmann, M ;

Stolz, W ;

Rühle, WW .

APPLIED PHYSICS LETTERS, 1999, 74 (16) :2271-2273

[4] Mode-locking with slow and fast saturable absorbers - What's the difference? [J].

Kartner, FX ;

Au, JAD ;

Keller, U .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (02) :159-168

[5] GaInNAs: A novel material for long-wavelength semiconductor lasers [J].

Kondow, M ;

Kitatani, T ;

Nakatsuka, S ;

Larson, MC ;

Nakahara, K ;

Yazawa, Y ;

Okai, M ;

Uomi, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) :719-730

[6] HIGH REFLECTIVITY 1.55 MU-M (AL)GASB/ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY [J].

LAMBERT, B ;

TOUDIC, Y ;

ROUILLARD, Y ;

BAUDET, M ;

GUENAIS, B ;

DEVEAUD, B ;

VALIENTE, I ;

SIMON, JC .

APPLIED PHYSICS LETTERS, 1994, 64 (06) :690-691

[7] HIGH REFLECTIVITY 1.55-MU-M (AL)GAASSB/ALASSB BRAGG REFLECTOR LATTICE-MATCHED ON INP SUBSTRATES [J].

LAMBERT, B ;

TOUDIC, Y ;

ROUILLARD, Y ;

GAUNEAU, M ;

BAUDET, M ;

ALARD, F ;

VALIENTE, I ;

SIMON, JC .

APPLIED PHYSICS LETTERS, 1995, 66 (04) :442-444

[8] Continuous-wave operation of long-wavelength GaInNAs/GaAs quantum well laser [J].

Nakahara, K ;

Kondow, K ;

Kitatani, T ;

Yazawa, Y ;

Uomi, K .

ELECTRONICS LETTERS, 1996, 32 (17) :1585-1586

[9] Stable single- and dual-wavelength fiber laser mode locked and spectrum shaped by a Fabry-Perot saturable absorber [J].

Okhotnikov, OG ;

Guina, M .

OPTICS LETTERS, 2000, 25 (22) :1624-1626

[10] 1.32-μm GaInNAs-GaAs laser with a low threshold current density [J].

Peng, CS ;

Jouhti, T ;

Laukkanen, P ;

Pavelescu, EM ;

Konttinen, J ;

Li, W ;

Pessa, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (03) :275-277

← 1 2 →