The photoluminescence in Si+-implanted SiO2 films with rapid thermal anneal

被引：30

作者：

Chou, ST ^{[1
]}

Tsai, JH

Sheu, BC

机构：

[1] Chung Cheng Inst Technol, Dept Elect Engn, Tao Yuan 33509, Taiwan

[2] Chung Cheng Inst Technol, Dept Appl Phys, Tao Yuan 33509, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.367368

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two photoluminescence (PL) bands were observed from Si+-implanted SiO2 films after rapid thermal anneal (RTA) at greater than or equal to 950 degrees C. The PL band at 2.2 eV was obtained from the films with RTA in dry nitrogen and the other one at 1.9 eV was obtained from the films with RTA in wet nitrogen. The luminescence at 2.2 eV disappeared after the films were reannealed with an electrical oven at greater than or equal to 600 degrees C, which is similar to the behavior of oxygen-and hydrogen-deficient structures, and therefore, the mechanism of this PL band was attributed to the E-delta' center. The other one at the 1.9 eV band, being related closely to Si-O-H structures and still appearing after being reannealed to 800 degrees C, could be ascribed to the effect of nonbridging oxygen hole centers. (C) 1998 American Institute of Physics.

引用

页码：5394 / 5398

页数：5

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