Imaging the restatom of the Ge(111)-c(2 x 8) surface with noncontact atomic force microscopy at room temperature

被引:12
作者
Abe, M
Sugimoto, Y
Morita, S
机构
[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
[2] Handai Frontier Res Ctr, Suita, Osaka 5650871, Japan
关键词
D O I
10.1088/0957-4484/16/3/013
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The restatoms of the Ge(111)-c(2 x 8) surface are imaged by noncontact atomic force microscopy (NC-AFM) at room temperature. In the NC-AFM measurements on this surface, there are two types of topographic contrast images depending on the tip apex structure and/or composition. In one of them only the adatoms are imaged, while in the other both the adatom and the restatom are imaged. In some of the images in the latter case, the distinction between adatoms and restatoms is unclear due to a special configuration and/or composition of the tip apex. A small number of Sri atoms embedded in the surface allows the discrimination between the adatom and the restatom.
引用
收藏
页码:S68 / S72
页数:5
相关论文
共 19 条
[1]   FREQUENCY-MODULATION DETECTION USING HIGH-Q CANTILEVERS FOR ENHANCED FORCE MICROSCOPE SENSITIVITY [J].
ALBRECHT, TR ;
GRUTTER, P ;
HORNE, D ;
RUGAR, D .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) :668-673
[2]   DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].
BECKER, RS ;
SWARTZENTRUBER, BS ;
VICKERS, JS ;
KLITSNER, T .
PHYSICAL REVIEW B, 1989, 39 (03) :1633-1647
[3]   Contrasted electronic properties of Sn-adatom-based (√3X√3)R30° reconstructions on Si(111) -: art. no. 115407 [J].
Charrier, A ;
Pérez, R ;
Thibaudau, F ;
Debever, JM ;
Ortega, J ;
Flores, F ;
Themlin, JM .
PHYSICAL REVIEW B, 2001, 64 (11)
[5]   DIRECT MEASUREMENT OF DIFFUSION BY HOT TUNNELING MICROSCOPY - ACTIVATION-ENERGY, ANISOTROPY, AND LONG JUMPS [J].
GANZ, E ;
THEISS, SK ;
HWANG, IS ;
GOLOVCHENKO, J .
PHYSICAL REVIEW LETTERS, 1992, 68 (10) :1567-1570
[6]   SN-INDUCED SURFACE RECONSTRUCTIONS ON THE GE(111) SURFACE STUDIED WITH SCANNING TUNNELING MICROSCOPY [J].
GOTHELID, M ;
HAMMAR, M ;
TORNEVIK, C ;
KARLSSON, UO ;
NILSSON, NG ;
FLODSTROM, SA .
SURFACE SCIENCE, 1992, 271 (03) :L357-L361
[7]   ASYMMETRY OF ADATOMS ON GE(111) OBSERVED BY SCANNING-TUNNELING-MICROSCOPY - THE CLEAN C(2X8) AND SN-INDUCED (7X7) STRUCTURES [J].
HIGASHIYAMA, K ;
LEWIS, SK ;
YNZUNZA, RX ;
TOBER, ED ;
KIM, YJ ;
FADLEY, CS .
SURFACE SCIENCE, 1993, 291 (1-2) :47-56
[8]   CHARGE-TRANSFER AND ASYMMETRY ON GE(111)-C(2X8) STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
HIRSCHORN, ES ;
LIN, DS ;
LEIBSLE, FM ;
SAMSAVAR, A ;
CHIANG, TC .
PHYSICAL REVIEW B, 1991, 44 (03) :1403-1406
[9]   Structural study of Si(111)(2√3 x 3√3)R30°-Sn surfaces [J].
Ichikawa, T ;
Cho, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (08) :5239-5245
[10]   ELECTRON INTERFEROMETRY AT A HETEROJUNCTION INTERFACE [J].
KUBBY, JA ;
WANG, YR ;
GREENE, WJ .
PHYSICAL REVIEW LETTERS, 1990, 65 (17) :2165-2168