PINIP based high-speed high-extinction ratio micron-size silicon electro-optic modulator

被引：49

作者：

Manipatruni, Sasikanth ^{[1
]}

Xu, Qianfan ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14850 USA

来源：

OPTICS EXPRESS | 2007年 / 15卷 / 20期

关键词：

D O I：

10.1364/OE.15.013035

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose an electro-optic device in silicon based on a p-i-n-i-p device structure for charge transport. The proposed device exhibits carrier injection time of 10 ps and extraction time of 15 ps enabling 100 GHz operation. When integrated into a resonator the micron-size device operates at 40 Gbit/s with 12 dB extinction ratio and 2.25 fJ/bit/micron-length power dissipation. The proposed device is limited in speed only by the photon lifetime of the resonator. (c) 2007 Optical Society of America.

引用

页码：13035 / 13042

页数：8

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