Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress

被引：55

作者：

Mitani, Y ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Inage Ku, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to clarify the effect of nitrogen incorporation on negative bias temperature instability (NBTI), V-TH degradations and its recoveries for NO-SiON and N-plasma SiON has been investigated. As a result, recovery of NBT degradation is more difficult for N-plasma SiON than for NO-SiON. This result indicates that nitrogen atoms have an effect on the "lock-in" of hydrogen or hydrogen-related species. Furthermore, on the basis of the analysis of DeltaV(TH) under DC stress, we also tried to predict the NBT degradation under AC stress.

引用

页码：117 / 120

页数：4

共 11 条

[1]

Alam MA, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P345

[2] Negative bias temperature instability on plasma-nitrided silicon dioxide film [J].

Ang, CH ;

Lek, CM ;

Tan, SS ;

Cho, BJ ;

Chen, TP ;

Lin, WH ;

Zhen, JZ .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3B) :L314-L316

[3] NEGATIVE BIAS STRESS OF MOS DEVICES AT HIGH ELECTRIC-FIELDS AND DEGRADATION OF MNOS DEVICES [J].

JEPPSON, KO ;

SVENSSON, CM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :2004-2014

[4] NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation [J].

Kimizuka, N ;

Yamaguchi, K ;

Imai, K ;

Iizuka, T ;

Liu, CT ;

Keller, RC ;

Horiuchi, T .

2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :92-93

[5]

Kimizuka N., 1999, VLSI S, P73

[6]

Krishnan AT, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P349

[7]

LAROSA G, 1999, IRPS P, P73

[8]

Rangan S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P341

[9]

Tan Shigui, 2003, SSDM EXT ABST, P68

[10] Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics [J].

Tsujikawa, S ;

Mine, T ;

Watanabe, K ;

Shimamoto, Y ;

Tsuchiya, R ;

Ohnishi, K ;

Onai, T ;

Yugami, J ;

Kimura, S .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :183-188

← 1 2 →