Negative bias temperature instability on plasma-nitrided silicon dioxide film

被引：24

作者：

Ang, CH

Lek, CM

Tan, SS

Cho, BJ

Chen, TP

Lin, WH

Zhen, JZ

机构：

[1] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore

[2] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[3] Nanyang Technol Univ, Dept Elect & Elect Engn, Singapore 639798, Singapore

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 3B期

关键词：

negative-bias-temperature-instability; thin oxide; interface trap; MOS;

D O I：

10.1143/JJAP.41.L314

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of negative-bias-temperature-instability (NBTI) on ultra-thin plasma-nitrided silicon dioxide films (1.8 and 2.6 nm) has been investigated and compared with conventional thermal nitridation. Plasma-nitrided oxides shows more resistance to NBTI, as compared to thermal-nitrided oxides. This is attributed to the fact that plasma nitridation incorporates the nitrogen at the top oxide surface, thus mitigating the undesirable nitrogen-enhanced NBTI effect. Additionally, the degradation mechanism of NBTI is found to be insensitive to the nitridation process, nitrogen concentration and boron penetration.

引用

收藏

页码：L314 / L316

页数：3

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