Defects in ZnO transparent conductors studied by capacitance transients at ZnO/Si interface

被引：17

作者：

Li, Baoe ^{[1
]}

Adachi, Yutaka ^{[1
]}

Li, Jianyong ^{[1
]}

Okushi, Hedeyo ^{[1
]}

Sakaguchi, Isao ^{[1
]}

Ueda, Shigenori ^{[1
]}

Yoshikawa, Hideki ^{[1
]}

Yamashita, Yoshiyuki ^{[1
]}

Senju, Shoichi ^{[1
]}

Kobayashi, Keisuke ^{[1
]}

Sumiya, Masatomo ^{[1
]}

Haneda, Hajime ^{[1
]}

Ohashi, Naoki ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 08期

基金：

日本学术振兴会;

关键词：

OXIDE THIN-FILMS; DOPED ZNO; SPECTROSCOPY;

D O I：

10.1063/1.3556440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep levels in heavily aluminum-doped zinc oxide (AZO) thin film were studied by transient capacitance (C-t) measurements and photoemission spectroscopy (PES). To study degenerated AZO by C-t measurements, AZO films were deposited on a p-type silicon (p-Si) substrate to form a depletion layer at the AZO/p-Si interface. Analyses of C-t behavior revealed that concentration of a trap level 0.3 eV below the bottom of the conduction was on the order of 10(19) cm(-3), which is 20%-50% of the shallow donor concentration. Such a high concentration of the trap level in AZO was evidenced by subsequent PES measurements. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3556440]

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页数：3

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