Dopant profile and defect control in ion implantation by RTA with high ramp-up rate

被引：4

作者：

Saito, S ^{[1
]}

Shishiguchi, S ^{[1
]}

Hamada, K ^{[1
]}

Hayashi, T ^{[1
]}

机构：

[1] NEC 1120, ULSI Device Dev Labs, Sagamihara, Kanagawa 2291198, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期

关键词：

ion implantation; low energy; high energy; RTA; enhanced diffusion; dislocation;

D O I：

10.1016/S0254-0584(98)00015-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ion implantation has been widely used for current production and would be used in sub-quarter micron devices. However, problems such as enhanced diffusion and junction leakage current result from point defects generated by implantation. Process optimization and refinement are essential to obtain an excellent performance in those devices. In this paper, the RTA process has been optimized to minimize enhanced diffusion in shallow junction formation and to reduce junction leakage current and variation in high energy implantation. In shallow junction formation, high temperature (1100 degrees C), high ramp-up rate (400 degrees C s(-1)) and short-time (50 ms) RTA is effective to obtain a junction as shallow as 50 nm with low sheet resistance of 305 Omega/square. In high-energy implantation, high temperature (greater than or equal to 1100 degrees C) and high ramp-up rate (greater than or equal to 200 degrees C s(-1)) RTA reduces junction leakage current and variation, when P(+) ions were implanted at 1 MeV with a dose of 1 x 10(14) cm(-2) These results suggest the effectiveness of high temperature and high ramp-up rate RTA on the controlling of dopant profiles and defects. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：49 / 53

页数：5

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