Improved synthesis of aligned arrays of single-walled carbon nanotubes and their implementation in thin film type transistors

被引:120
作者
Kocabas, Coskun
Kang, Seong Jun
Ozel, Taner
Shim, Moonsub
Rogers, John A. [1 ]
机构
[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
[4] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[5] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
[6] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[7] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[8] Korea Res Inst Stand & Sci, Taejon 305340, South Korea
关键词
D O I
10.1021/jp071387w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report optimized chemical vapor deposition growth procedures that can produce arrays of individual single walled carbon nanotubes (SWNTs) in horizontal configurations with perfect linear shapes to within experimental uncertainties and with levels of alignment > 99.9%. This process also enables simultaneous growth of random networks of SWNTs integrated with the arrays in complex layouts. The electrical properties of-thin film type transistors formed with SWNTs grown in this fashion approach expectations based on the intrinsic properties of the pristine, individual SWNTs. The procedures described here might represent a strategy to large scale integration of SWNTs into devices for applications in electronics and optoelectronics, sensing, nanomechanical systems, and other areas.
引用
收藏
页码:17879 / 17886
页数:8
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