Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy

被引：16

作者：

Gong, Q

Liang, JB

Xu, B

Ding, D

Li, HX

Jiang, C

Zhou, W

Liu, FQ

Wang, ZG

Qiu, XH

Shang, GY

Bai, CL

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Chem, Beijing 100082, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 192卷 / 3-4期

基金：

中国国家自然科学基金;

关键词：

nanometer island; InAs; molecular beam epitaxy; atomic force microscopy; quantum dot;

D O I：

10.1016/S0022-0248(98)00435-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved.

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页码：376 / 380

页数：5

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