III-V micromachined devices for microsystems

被引:30
作者
Leclercq, JL
Ribas, RP
Karam, JM
Viktorovitch, P
机构
[1] Ecole Cent Lyon, LEAME, UMR CNRS 5512, F-69131 Ecully, France
[2] TIMA, CMP, F-38031 Grenoble, France
关键词
III-V; micromachined devices; microsystems; MEMS; microtechnology;
D O I
10.1016/S0026-2692(98)00024-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper aims to present a brief review on the specific features and advantages of the m-V micromachined devices for microsystems, making them an attractive alternative to the well developed Si-based microtechnology in the field of MEMS (Micro-Electro-Mechanical Systems). The GaAs-based MEMS processing techniques are more currently investigated for collective fabrication of low cost and high Volume microsystem devices. Potential. applications of M-based microtechnology are presented for monolithic integration of optoelectronic functions with micro-electro-mechanical transducers enabling the realisation of MOEMS (Micro-Opto-Electro-Mechanical Systems). (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:613 / 619
页数:7
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