Near-unity below-band-gap absorption by microstructured silicon

被引：428

作者：

Wu, C ^{[1
]}

Crouch, CH

Zhao, L

Carey, JE

Younkin, R

Levinson, JA

Mazur, E

Farrell, RM

Gothoskar, P

Karger, A

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

[3] Harvard Univ, Dept Chem, Cambridge, MA 02138 USA

[4] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 13期

关键词：

D O I：

10.1063/1.1358846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We increased the absorptance of light by silicon to approximately 90% from the near ultraviolet (0.25 mum) to the near infrared (2.5 mum) by surface microstructuring using laser-chemical etching. The remarkable absorptance most likely comes from a high density of impurities and structural defects in the silicon lattice, enhanced by surface texturing. Microstructured avalanche photodiodes show significant enhancement of below-band-gap photocurrent generation at 1.06 and 1.31 mum, indicating promise for use in infrared photodetectors. (C) 2001 American Institute of Physics.

引用

页码：1850 / 1852

页数：3

共 18 条

[1] INFLUENCE OF HYDROSTATIC PRESSURE AND TEMPERATURE ON DEEP DONOR LEVELS OF SULFUR IN SILICON [J].