Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As

被引：37

作者：

Lee, K. Y. ^{[1
]}

Lee, Y. J. ^{[1
]}

Chang, P. ^{[1
]}

Huang, M. L. ^{[1
]}

Chang, Y. C. ^{[1
]}

Hong, M. ^{[1
]}

Kwo, J. ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30012, Taiwan

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30012, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

关键词：

X ray photoelectron spectroscopy;

D O I：

10.1063/1.2952826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A capacitive effective thickness (CET) value of 1.0 nm has been achieved in atomic layer deposited (ALD) high kappa dielectrics HfO(2) on In(0.53)Ga(0.47)As/InP. The key is a short air exposure under 10 min between removal of the freshly grown semiconductor epilayers and loading to the ALD reactor. This has led to minimal formation of the interfacial layer thickness, as confirmed using x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. The measured electrical characteristics of metal-oxide-semiconductor diodes of Au/Ti/HfO(2)(4.5 nm)/In(0.53)Ga(0.47)As showed a low leakage current density of 3.8x10(-4) A/cm(2) at V(FB)+1 V, which is about eight orders of magnitudes lower than that of SiO(2) with the same CET. The capacitance-voltage curves show an overall kappa value of 17-18, a nearly zero flatband shift, and an interfacial density of states D(it) of 2x10(12) cm(-2) eV(-1). (c) 2008 American Institute of Physics.

引用

页数：3

共 16 条

[1] Atomic-layer-deposited HfO2 on In0.53Ga0.47As:: Passivation and energy-band parameters [J].

Chang, Y. C. ;

Huang, M. L. ;

Lee, K. Y. ;

Lee, Y. J. ;

Lin, T. D. ;

Hong, M. ;

Kwo, J. ;

Lay, T. S. ;

Liao, C. C. ;

Cheng, K. Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[2]

CHAU R, 2007, IEEE IEDM SHORT COUR, P61106

[3]

Colle M. D., 1994, J ELECT SPECTROSC RE, V70, P129

[4] HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition -: art. no. 152904 [J].

Frank, MM ;

Wilk, GD ;

Starodub, D ;

Gustafsson, T ;

Garfunkel, E ;

Chabal, YJ ;

Grazul, J ;

Muller, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3

[5] Novel Ga2O3(Gd2O3) passivation techniques to produce low D-it oxide-GaAs interfaces [J].

Hong, M ;

Mannaerts, JP ;

Bower, JE ;

Kwo, J ;

Passlack, M ;

Hwang, WY ;

Tu, LW .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :422-427

[6] III-V metal-oxide-semiconductor field-effect transistors with high κ dielectrics [J].

Hong, Minghwei ;

Kwo, J. Raynien ;

Tsai, Pei-chun ;

Chang, Yaochung ;

Huang, Mao-Lin ;

Chen, Chih-Ping ;

Lin, Tsung-Da .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (5B) :3167-3180

[7]

HOUSSA M, 2004, MRS SPRING M 1 UNPUB, P61106

[8] Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure [J].

Huang, M. L. ;

Chang, Y. C. ;

Chang, C. H. ;

Lin, T. D. ;

Kwo, J. ;

Wu, T. B. ;

Hong, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[9] Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 -: art. no. 252104 [J].

Huang, ML ;

Chang, YC ;

Chang, CH ;

Lee, YJ ;

Chang, P ;

Kwo, J ;

Wu, TB ;

Hong, M .

APPLIED PHYSICS LETTERS, 2005, 87 (25) :1-3

[10] Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation [J].

Kim, Hyoung-Sub ;

Ok, Injo ;

Zhang, Manhong ;

Choi, Changhwan ;

Lee, Tackhwi ;

Zhu, Feng ;

Thareja, Gaurav ;

Yu, Lu ;

Lee, Jack C. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)

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