Fabrication of a 1.55-μm VCSEL and an InGaAsP-InP HBT from a common epitaxial structure

被引：9

作者：

Eriksson, U ^{[1
]}

Evaldsson, P ^{[1
]}

Streubel, K ^{[1
]}

机构：

[1] Royal Inst Technol, Lab Photon & Microwave Engn, S-16440 Stockholm, Sweden

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 04期

关键词：

diffusion processes; heterojunction bipolar transistors; surface-emitting lasers; zinc;

D O I：

10.1109/68.752529

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A common epitaxial structure is used for the fabrication of a 1.55-mu m vertical-cavity surface-emitting laser and an InGaAsP-InP heterojunction bipolar transistor (HBT), By selectively applying zinc diffusion directly after growth, the doping type of the HBT cap and emitter is reversed, providing the epitaxial material used for the laser. This enables a similar process to be used for the two devices. Fabricated HBT's show a current gain of 400 at a collector current of 20 mA. Lasers are electrically pumped and operate continuous wave up to -70 degrees C.

引用

页码：403 / 405

页数：3

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