The tunnel source (PNPN) n-MOSFET: A novel high performance transistor

被引：265

作者：

Nagavarapu, Venkatagirish ^{[1
]}

Jhaveri, Ritesh ^{[1
]}

Woo, Jason C. S. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 04期

基金：

美国国家科学基金会;

关键词：

band-to-band tunneling; I-ON/I-OFF ratio; metal-oxide-semiconductor field-effect transistor (MOSFET) scaling; subthreshold swing;

D O I：

10.1109/TED.2008.916711

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As MOSFET is scaled below 90 nm, many daunting challenges arise. Short-channel effects (SCEs; drain-induced barrier lowering and V-TH rolloff), off-state leakage, parasitic capacitance, and resistance severely limit the performance of these transistors. New device innovations are essential to overcome these difficulties. In this paper, we propose the concept of a novel tunnel source (PNPN) n-MOSFET based on the principle of band-to-band tunneling. It is found that the PNPN n-MOSFET has the potential of steep subthreshold swing and improved ION in addition to immunities against SCEs. Therefore, such a PNPN n-MOSFET can overcome the ever-degrading on-off characteristics of the deeply scaled conventional MOSFET. The design of the PNPN n-MOSFET was extensively examined using simulations. Devices with source-side tunneling junctions were fabricated on bulk substrates using spike anneal, and the experimental data is presented.

引用

页码：1013 / 1019

页数：7

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