High-performance, stable organic thin-film field-effect transistors based on bis-5′-alkylthiophen-2′-yl-2,6-anthracene semiconductors

被引：273

作者：

Meng, H ^{[1
]}

Sun, FP ^{[1
]}

Goldfinger, MB ^{[1
]}

Jaycox, GD ^{[1
]}

Li, ZG ^{[1
]}

Marshall, WJ ^{[1
]}

Blackman, GS ^{[1
]}

机构：

[1] DuPont Co Inc, Cent Res & Dev, Expt Stn, Wilmington, DE 19880 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2005年 / 127卷 / 08期

关键词：

D O I：

10.1021/ja043189d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The development of new organic semiconductors with improved electrical performance and enhanced environmental stability is the focus of considerable research activity. This communication presents the design, synthesis, and device stability data for novel bis-5′-alkylthiophen-2′yl-2,6-anthracene organic semiconductors. When incorporated into thin-film field-effect transistors, mobilities as high as 0.5 cm2/Vs and on/off current ratios greater than 107 are observed. We have investigated device stability in terms of both shelf life and operating lifetime. Devices incorporating the reported semiconductors display an average field-effect mobility of 0.4 cm2/Vs for DHTAnt and an on/off current ratio of 106 even after 15 months of storage. Furthermore, there is no decrease in performance during continuous operation of the devices over several thousand cycles. Copyright © 2005 American Chemical Society.

引用

页码：2406 / 2407

页数：2

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