Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

被引：14

作者：

Cho, HK

Lee, JY

Leem, JY

机构：

[1] Dong A Univ, Dept Met Engn, Pusan 604714, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[3] Inje Univ, Dept Opt Engn, Pusan 621749, South Korea

来源：

APPLIED SURFACE SCIENCE | 2004年 / 221卷 / 1-4期

关键词：

MQW; transmission electron microscopy; strain relaxation;

D O I：

10.1016/S0169-4332(03)00884-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：288 / 292

页数：5

共 17 条

[1] Study of the strain relaxation in InGaN/GaN multiple quantum well structures [J].