Determination of the polarity of ZnO thin films by electron energy-loss spectroscopy

被引:27
作者
Wang, Y
Xu, QY
Du, XL
Mei, ZX
Zeng, ZQ
Xue, QK
Zhang, Z
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[4] Beijing Univ Sci & Technol, Beijing 100022, Peoples R China
基金
中国国家自然科学基金;
关键词
polarity; EELS; zinc oxide; oxygen K-edge;
D O I
10.1016/j.physleta.2003.11.032
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The polarity of the ZnO film grown on sapphire using an ultra-thin Ga wetting layer has been investigated by electron energy-loss spectroscopy (EELS). The intensity of the oxygen K-edge in electron energy-loss spectrum from the ZnO film shows a prominent difference when the film orientation changes from the (0002) Bragg condition to the (000 (2) over bar) Bragg condition. The EELS study reveals that the ZnO film with very thin Ga wetting layer has the [0001] polarity, which is further confirmed by the conventional convergent beam electron diffraction method. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:322 / 326
页数:5
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