Exciton binding energies and band gaps in GaN bulk crystals

被引：31

作者：

Reimann, K ^{[1
]}

Steube, M

Frohlich, D

Clarke, SJ

机构：

[1] Univ Dortmund, Inst Phys, D-44221 Dortmund, Germany

[2] Cornell Univ, Dept Chem, Ithaca, NY 14853 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

gallium nitride; two-photon spectroscopy; photoluminescence; excitons; electronic band structure;

D O I：

10.1016/S0022-0248(98)00236-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence and two-photon measurements were performed on hexagonal bulk GaN. From photoluminescence we have obtained the energies of free 1S excitons, from two-photon spectroscopy the energies of 2P excitons. These results together allow an accurate determination of exciton binding energies and band gaps. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：652 / 655

页数：4

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