Biexciton luminescence from GaN epitaxial layers

被引：39

作者：

Okada, K

Yamada, Y

Taguchi, T

Sasaki, F

Kobayashi, S

Tani, T

Nakamura, S

Shinomiya, G

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

[2] NICHIA CHEM IND LTD,DEPT RES & DEV,ANAN,TOKUSHIMA 774,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 6B期

关键词：

exciton; biexciton; photoluminescence; high-density excitation; GaN;

D O I：

10.1143/JJAP.35.L787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excitonic luminescence from GaN epitaxial layers has been studied under high-density excitation. The first experimental evidence for biexciton formation in GaN was obtained. The binding energy of the biexciton was estimated to be 5.3 meV. Therefore, the ratio of biexciton binding energy to exciton binding energy was approximately 0.19.

引用

页码：L787 / L789

页数：3

共 14 条

[1]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[2] STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER [J].