metal chalcogenides;
semiconductors;
single-source precursor;
film deposition;
MOCVD;
D O I:
10.1002/cvde.19960020302
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
Modern inorganic materials are required to fulfill a range of demands for quality and performance in an increasing number of applications. Single-source precursor molecules can satisfy many of these requirements. In this review article ligand design (leading, for example, to the dimer shown in the Figure) to address problems associated with gas phase pre-reactions, thermal stability, ease of handling, toxicity, and purity for II-VI deposition are discussed.
引用
收藏
页码:85 / &
页数:13
相关论文
共 182 条
[71]
FOSTER DF, 1994, ADV MATER OPT ELECTR, V3, P163, DOI 10.1002/amo.860030123