Metal chalcogenide materials: Chalcogenolato complexes as ''single-source'' precursors

被引：178

作者：

Bochmann, M ^{[1
]}

机构：

[1] UNIV E ANGLIA,SCH CHEM SCI,NORWICH NR4 7JT,NORFOLK,ENGLAND

来源：

CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 03期

关键词：

metal chalcogenides; semiconductors; single-source precursor; film deposition; MOCVD;

D O I：

10.1002/cvde.19960020302

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Modern inorganic materials are required to fulfill a range of demands for quality and performance in an increasing number of applications. Single-source precursor molecules can satisfy many of these requirements. In this review article ligand design (leading, for example, to the dimer shown in the Figure) to address problems associated with gas phase pre-reactions, thermal stability, ease of handling, toxicity, and purity for II-VI deposition are discussed.

引用

页码：85 / &

页数：13

共 182 条

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