Single Terrace Growth of Graphene on a Metal Surface

被引：72

作者：

Guenther, S. ^{[1
]}

Daenhardt, S. ^{[1
]}

Wang, B. ^{[2
,3
]}

Bocquet, M. -L. ^{[2
,3
]}

Schmitt, S. ^{[4
]}

Wintterlin, J. ^{[1
,5
]}

机构：

[1] Univ Munich, Dept Chem, D-81377 Munich, Germany

[2] Univ Lyon, Chim Lab, Ecole Normale Super Lyon, F-69364 Lyon, France

[3] CNRS, F-69364 Lyon, France

[4] SPECS GmbH, D-13355 Berlin, Germany

[5] Ctr NanoSci CeNS, D-80799 Munich, Germany

来源：

NANO LETTERS | 2011年 / 11卷 / 05期

关键词：

Graphene; ruthenium; in situ; scanning tunneling microscopy; faceting; density functional theory; LARGE-AREA; FILMS;

D O I：

10.1021/nl103947x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The epitaxial growth of graphene by chemical vapor deposition of ethylene on a Ru(0001) surface was monitored by high-temperature scanning tunneling microscopy. The in situ data show that at low pressures and high temperatures the metal surface facets into large terraces, leading to much better ordered graphene layers than resulting from the known growth mode. Density functional theory calculations show that the single terrace growth mode can be understood from the energetics of the graphene-metal interaction.

引用

页码：1895 / 1900

页数：6

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