A two-step oxidation mediated condensation process for ultrathin high Ge content SiGe epitaxial films on insulator

被引：4

作者：

Mukherjee-Roy, M ^{[1
]}

Agarwal, A ^{[1
]}

Balakumar, S ^{[1
]}

Du, AY ^{[1
]}

Trigg, AD ^{[1
]}

Kumar, R ^{[1
]}

Balasubramanian, N ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Inst Microelect, Singapore 117685, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 07期

关键词：

D O I：

10.1149/1.1921132

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ultrathin SiGe films on insulator, with high Ge fraction, are fabricated through Ge condensation. A two-step oxidation process is pursued where temperatures chosen are lower than that corresponding to the solidous curve of the Si-Ge phase diagram. In this way, the smallest achievable thickness could be decreased further compared to a single step oxidation process. We achieved a uniform Ge fraction of 0.6 at a SiGe thickness of 6 nm, indicating a ten-fold increase in Ge fraction as compared to starting epitaxial SiGe layer. The surface roughness was below 1 nm and XRD analysis indicates that the films are compressive. (c) 2005 The Electrochemical Society.

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页码：G164 / G166

页数：3

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