Simulated threshold voltage adjustment and drain current enhancement in novel striped-gate nondoped-channel fully depleted SOI-MOSFETs

To enhance the performance of metal-oxide-silicon field-effect-transistors (MOSFETs), a new device having a Silicon-on-insulator (SOI) structure, called a striped-gate SOI-MOSFET, is proposed and its electrical characteristics are estimated by device simulation. The threshold voltage of this device is controlled by changing the length of a metal layer interposed in the gate electrode. A set of systematic device simulations reveals a type of two-dimensional effect in the gate electric field provides a continuous threshold voltage control for a non-doped channel SOI-MOSFET, and that the suppression of the channel doping provides a large drain current. A circuit simulation on a 2-input complementary-MOS (CMOS) NAND gate chain comprising the devices shows that the operation speed is enhanced by 46% compared with that of bulk MOSFETs, due to the device's large drain current and small parasitic capacitance.