On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling

被引：24

作者：

Ando, Takashi ^{[1
]}

Sathaye, Ninad D. ^{[2
]}

Murali, Kota V. R. M. ^{[2
]}

Cartier, Eduard A. ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM India Semicond Res & Dev Ctr, Bangalore 560045, Karnataka, India

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 07期

关键词：

Direct tunneling; hafnium oxide; scavenging; transfer matrix; SEMICONDUCTOR-DEVICES; BAND-GAP; CURRENTS; OXIDES;

D O I：

10.1109/LED.2011.2146751

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With decreasing SiO2 interfacial-layer (IL) thickness, gate currents in SiO2/HfO2 dual-layer gate stacks are observed to undergo drastic changes. For an IL thickness below 3 angstrom, a transition from hole-current-dominated transport to electron-current-dominated transport is observed near operating bias conditions in p-channel field-effect transistors. A tunneling simulation based on the transfer-matrix approach suggests that the band offsets for the SiO2 and HfO2 layers are reduced in the submonolayer IL regime (< 3 angstrom), promoting the transition in the conduction mechanism.

引用

页码：865 / 867

页数：3

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