Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles

被引:63
作者
Ando, Takashi [1 ,2 ]
Copel, Matt [1 ]
Bruley, John [1 ]
Frank, Martin M. [1 ]
Watanabe, Heiji [2 ]
Narayanan, Vijay [1 ]
机构
[1] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan
关键词
aluminium; electron mobility; hafnium compounds; high-k dielectric thin films; lanthanum; metal-insulator boundaries; MOS capacitors; silicon compounds;
D O I
10.1063/1.3373914
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric and clarify the kinetics underlying this process. The intrinsic IL scaling effect on electron mobility is separated from La and Al-induced dipole effects. We find that the mobility degradation for La-containing high-kappa dielectrics is not due to the La-induced dipole but due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation. This unique nature of the La-induced dipole enables aggressive equivalent oxide thickness scaling down to 0.42 nm without extrinsic mobility degradation when combined with IL scaling.
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页数:3
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