TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS

被引：15

作者：

Ielmini, D. ^{[1
,2
]}

Nardi, F. ^{[1
,2
]}

Cagli, C. ^{[1
,2
]}

Lacaita, A. L. ^{[1
,2
,3
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, Piazza L da Vinci 32, I-20133 Milan, Italy

[2] Politecn Milan, IU NET, I-20133 Milan, Italy

[3] Politecn Milan, CNR, IFN, Milan, Italy

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

Resistive-switching memory (RRAM); non-volatile; memory; reliability estimation; reliability modeling; MEMORY; DEVICES; NICKEL; LAYER;

D O I：

10.1109/IRPS.2010.5488761

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density non-volatile storage. The main obstacles to practical application in nonvolatile memories are the variability of program/erase voltages, the large and hardly scalable programming current and the cell reliability. We have investigated data retention in RRAM samples with NiO as active switching material. Temperature-accelerated bake experiments show that data retention limited by oxidation of the conductive filament (CF) obey an Arrhenius law, while the retention time decreases for decreasing size of the CF. The results are interpreted by a physical model for CF dissolution in an oxidizing environment, which can be applied to both data retention extrapolation at long times and low temperatures, and the reset operation in the ns/ms regime. The model is verified with experimental data, and the tradeoff between data retention and reset current is finally discussed.

引用

页码：620 / 626

页数：7

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