A Ta2O5 solid-electrolyte switch with improved reliability

被引：60

作者：

Sakamoto, Toshitsugu ^{[1
,2
,3
]}

Banno, Naoki ^{[1
,2
,3
]}

Iguchi, Noriyuki ^{[2
]}

Kawaura, Hisao ^{[2
]}

Sunamura, Hiroshi ^{[1
]}

Fujieda, Shinji ^{[1
]}

Terabe, Kazuya ^{[3
,4
]}

Hasegawa, Tsuyoshi ^{[3
,4
]}

Aono, Masakazu ^{[3
,4
]}

机构：

[1] NEC Corp Ltd, Syst Devices Res Labs, Sagamihara, Kanagawa 2291198, Japan

[2] NEC Corp Ltd, Fundamental & Environm Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] Japan Sci & Technol Agcy JST, ICORP, Tsukuba, Ibaraki 3050003, Japan

[4] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan

来源：

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2007年

关键词：

D O I：

10.1109/VLSIT.2007.4339718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel solid-electrolyte switch ("NanoBridge") promising for application to field programmable gate array (FPGA). We replace a former solid electrolyte of Cu2S with Ta2O5, which has a Siprocess compatibility,. As a result; we successfully control the turn-on voltage to adapt to CMOS operation. The Ta2O5-NanoBridge exhibits a high reliability of cycling endurance (> 10(4)) and a stability against EM (> 10years at 2.6mA at RT). Furthermore, we demonstrate that the conducting path of the switch is a Cu precipitate with 30nm in diameter, which possibly enables to scale down the switch.

引用

页码：38 / +

页数：2

共 5 条

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