Instability in threshold voltage and subthreshold behavior in Hf-In-Zn-O thin film transistors induced by bias-and light-stress

被引：102

作者：

Ghaffarzadeh, Khashayar ^{[1
]}

Nathan, Arokia ^{[1
]}

Robertson, John ^{[2
]}

Kim, Sangwook ^{[3
]}

Jeon, Sanghun ^{[3
]}

Kim, Changjung ^{[3
]}

Chung, U-In ^{[3
]}

Lee, Je-Hun ^{[4
]}

机构：

[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

[2] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[3] Samsung Adv Inst Technol, Semicond Device Lab, Yongin 449712, Gyeonggi Do, South Korea

[4] Samsung Elect, Yongin 449712, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

关键词：

OXIDE SEMICONDUCTORS; TFTS;

D O I：

10.1063/1.3480547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-oxide (HIZO) thin film transistors with a silicon oxide/nitride dielectric stack reveals defect density changes, charge trapping and persistent photoconductivity (PPC). In the absence of light, the polarity of bias stress controls the magnitude and direction of the threshold voltage shift (Delta V(T)), while under light stress, V(T) consistently shifts negatively. In all cases, there was no significant change in field-effect mobility. Light stress gives rise to a PPC with wavelength-dependent recovery on time scale of days. We observe that the PPC becomes more pronounced at shorter wavelengths. (C) 2010 American Institute of Physics. [doi:10.1063/1.3480547]

引用

页数：3

共 22 条

[1] Effect of threshold voltage instability on field effect mobility in thin film transistors deduced from constant current measurements [J].

Ahnood, A. ;

Chaji, G. Reza ;

Sazonov, A. ;

Nathan, A. .

APPLIED PHYSICS LETTERS, 2009, 95 (06)

[2] Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays [J].

Chuang, Chiao-Shun ;

Fung, Tze-Ching ;

Mullins, Barry G. ;

Nomura, Kenji ;

Kamiya, Toshio ;

Shieh, Han-Ping David ;

Hosono, Hideo ;

Kanicki, Jerzy .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :1215-+

[3] A comparison of the performance and stability of ZnO-TFTs with silicon dioxide and nitride as gate insulators [J].

Cross, R. B. M. ;

De Souza, Maria Merlyne ;

Deane, Steve C. ;

Young, Nigel D. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (05) :1109-1115

[4] Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements [J].

Esmaeili-Rad, Mohammad R. ;

Sazonov, Andrei ;

Nathan, Arokia .

APPLIED PHYSICS LETTERS, 2007, 91 (11)

[5] The influence of visible light on transparent zinc tin oxide thin film transistors [J].

Goerrn, P. ;

Lehnhardt, M. ;

Riedl, T. ;

Kowalsky, W. .

APPLIED PHYSICS LETTERS, 2007, 91 (19)

[6] Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination [J].

Gosain, Dharam Pal ;

Tanaka, Tsutomu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)

[7] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[8] Stress-induced width-dependent degradation of low-temperature polycrystalline silicon thin-film transistor [J].

Hsieh, Szu-I ;

Liang, Hsing-Yi ;

Lin, Chrong-Jung ;

King, Ya-Chin ;

Chen, Hung-Tse .

APPLIED PHYSICS LETTERS, 2007, 90 (18)

[9] Oxygen vacancies in ZnO [J].

Janotti, A ;

Van de Walle, CG .

APPLIED PHYSICS LETTERS, 2005, 87 (12) :1-3

[10] Electronic structures and device applications of transparent oxide semiconductors: What is the real merit of oxide semiconductors? [J].

Kamiya, T ;

Hosono, H ;

Kamiya, T ;

Hosono, H ;

Hosono, H .

INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY, 2005, 2 (04) :285-294

← 1 2 3 →