Absence of defect state creation in nanocrystalline silicon thin film transistors deduced from constant current stress measurements

被引：17

作者：

Esmaeili-Rad, Mohammad R. ^{[1
]}

Sazonov, Andrei

Nathan, Arokia

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

[2] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

基金：

加拿大自然科学与工程研究理事会;

关键词：

D O I：

10.1063/1.2783971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors discuss time and temperature dependences of the shift in threshold voltage (Delta V-T) of nanocrystalline silicon (nc-Si) thin film transistors (TFTs) stressed at constant drain currents. In contrast to the behavior of the hydrogenated amorphous silicon (a-Si:H) counterpart, a weak temperature dependence of Delta V-T was observed. The results follow the charge trapping model and the predicted stretched-exponential time dependence that saturates at prolonged stress times. In addition, Delta V-T does not fit into the thermalization energy concept that was developed based on the defect state creation model for a-Si:H TFTs. The results indicate absence of defect state creation in nc-Si TFTs.

引用

页数：3

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