The influence of visible light on transparent zinc tin oxide thin film transistors

被引：112

作者：

Goerrn, P. ^{[1
]}

Lehnhardt, M. ^{[1
]}

Riedl, T. ^{[1
]}

Kowalsky, W. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38106 Braunschweig, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 19期

关键词：

D O I：

10.1063/1.2806934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of transparent zinc tin oxide thin film transistors (TTFTs) upon illumination with visible light are reported. Generally, a reversible decrease of threshold voltage V-th, saturation field effect mobility mu(sat), and an increase of the off current are found. The time scale of the recovery in the dark is governed by the persistent photoconductivity in the semiconductor. Devices with tuned [Zn]:[Sn] ratio show a shift of V-th of less 2 V upon illumination at 5 mW/cm(2) (brightness > 30 000 cd/m(2)) throughout the visible spectrum. These results demonstrate TTFTs which are candidates as pixel drivers in transparent active-matrix organic light emitting diode displays.

引用

页数：3

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