Formation of quantum wires and dots on InP(001) by As/P exchange

被引：43

作者：

Yang, HY ^{[1
]}

Ballet, P ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 12期

关键词：

D O I：

10.1063/1.1372622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the use of in situ scanning tunneling microscopy to study As/P exchange on InP(001) surfaces by molecular beam epitaxy. Results demonstrate that the exchange process can be controlled to selectively produce either quantum wires or quantum dots. 15 nm wide self-assembled nanowires are observed, and they are elongated along the dimer row direction of the InP(001)-2 X 4 surface with a length of over 1 mum and flat top 2 X 4 surfaces. In addition, when the nanowires are annealed with no arsenic overpressure, the surface reconstruction transforms from 2 X 4 to 4 X 2 and the nanowires transform into dots with a rectangular base and flat top. (C) 2001 American Institute of Physics.

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页码：7871 / 7874

页数：4

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