Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection

被引：36

作者：

Lien, Wei-Cheng ^{[1
,2
,3
]}

Tsai, Dung-Sheng ^{[1
,2
]}

Chiu, Shu-Hsien ^{[1
,2
]}

Senesky, Debbie G. ^{[3
]}

Maboudian, Roya ^{[3
]}

Pisano, Albert P. ^{[3
]}

He, Jr-Hau ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94706 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 11期

关键词：

Nanowires; photodetectors (PDs); SiC; ZnO;

D O I：

10.1109/LED.2011.2164570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates high-temperature operation of metal-semiconductor-metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25 degrees C and from 4.9 to 7.6 at 200 degrees C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

引用

页码：1564 / 1566

页数：3

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