The hetero-epitaxial SiCN/Si MSM photodetector for high-temperature deep-UV detecting applications

被引：65

作者：

Chang, WR ^{[1
]}

Fang, YK ^{[1
]}

Ting, SF ^{[1
]}

Tsair, YS ^{[1
]}

Chang, CN ^{[1
]}

Lin, CY ^{[1
]}

Chen, SF ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, VLSI Technol Lab, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 09期

关键词：

hetero-epitaxial; MSM; photodetector; SiCN; UV;

D O I：

10.1109/LED.2003.816577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A visible-blind ultraviolet (UV) photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed on a cubic-crystalline SiCN film. The cubic-crystalline SiCN film was deposited on Si substrate with rapid thermal chemical vapor deposition (RTCVD). The optoelectron performances of the SiCN-MSM PD have been examined by the measurement of photo and dark currents and the currents' ratio under various operating temperatures. The current ratio for 254-nm UV light of the detector is about 6.5 at room temperature and 2.3 at 200 degreesC, respectively. The results are better than the counterpart beta-SiC of 5.4 at room temperature, and less than 2 for above 100 degreesC, thus offering potential applications for low-cost and high-temperature UV detection.

引用

页码：565 / 567

页数：3

共 9 条

[1] ELECTRICAL TRANSPORT-PROPERTIES OF CRYSTALLINE SILICON-CARBIDE SILICON HETEROJUNCTIONS [J].

CHAUDHRY, MI .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :670-672

[2] Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition [J].

Chen, KH ;

Wu, JJ ;

Wen, CY ;

Chen, LC ;

Fan, CW ;

Kuo, PF ;

Chen, YF ;

Huang, YS .

THIN SOLID FILMS, 1999, 355 :205-209

[3] Crystalline silicon carbon nitride: A wide band gap semiconductor [J].

Chen, LC ;

Chen, CK ;

Wei, SL ;

Bhusari, DM ;

Chen, KH ;

Chen, YF ;

Jong, YC ;

Huang, YS .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2463-2465

[4] Improving breakdown voltage of SiC/Si heterojunction with graded structure by rapid thermal CVD technology [J].

Hwang, JD ;

Fang, YK ;

Wu, KH ;

Chou, SM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (11) :2029-2031

[5]

*ICDD, 1999, DAT MAINT DISTR INT

[6] STABLE, HIGH QUANTUM EFFICIENCY, UV-ENHANCED SILICON PHOTODIODES BY ARSENIC DIFFUSION [J].

KORDE, R ;

GEIST, J .

SOLID-STATE ELECTRONICS, 1987, 30 (01) :89-92

[7] Semiconductor ultraviolet detectors [J].

Razeghi, M ;

Rogalski, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473

[8] Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition [J].

Ting, SF ;

Fang, YK ;

Hsieh, WT ;

Tsair, YS ;

Chang, CN ;

Lin, CS ;

Hsieh, MC ;

Chiang, HC ;

Ho, JJ .

JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (12) :1341-1346

[9] Cubic single-crystalline Si1-x-yCxNy films with mirror face prepared by RTCVD [J].

Ting, SF ;

Fang, YK ;

Hsieh, WT ;

Tsair, YS ;

Chang, CN ;

Lin, CS ;

Hsieh, MC ;

Chiang, HC ;

Ho, JJ .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (11) :G91-G93

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