Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

被引:7
作者
Ting, SF
Fang, YK
Hsieh, WT
Tsair, YS
Chang, CN
Lin, CS
Hsieh, MC
Chiang, HC
Ho, JJ
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, VLSI Technol Lab, Tainan 701, Taiwan
[2] Fortune Inst Technol, Dept Elect Engn, Kaohsiung 842, Taiwan
关键词
c-Si1-x-yCxNy; RTCVD; carbon source; SiCN; methysilane;
D O I
10.1007/s11664-002-0119-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cubic crystalline silicon-carbon nitride (Si1-x-yCxNy) films have been grown successfully using various carbon sources by rapid-thermal chemical-vapor deposition (RTCVD). The characteristics of the Si1-x-yCxNy films grown with SiH3CH3, C2H4, and C3H8 are examined and compared by x-ray photoelectron spectroscopy (XPS) spectra, scanning electron microscopy (SEM) images, and transmission electron microscopy (TEM) patterns. The XPS spectra show that the differences of chemical composition and chemical-bonding state are co-related to the C bonding type of the different carbon source. The SEM images and TEM analysis indicate that the better Si1-yCxNy film can be obtained using C3H8 gas as the carbon source. In addition, correlations between the growing stages to the microstructure of the cubic-crystalline Si1-yCxNy films have been illustrated in detail.
引用
收藏
页码:1341 / 1346
页数:6
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