Evolution of structural order in germanium ion-implanted amorphous silicon layers

被引：18

作者：

Cheng, SL ^{[1
]}

Lin, HH

He, JH

Chiang, TF

Yu, CH

Chen, LJ

Yang, CK

Wu, DY

Chien, SC

Chen, WC

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] United Microelect Corp, Hsinchu, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 02期

关键词：

D O I：

10.1063/1.1486256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. (C) 2002 American Institute of Physics.

引用

页码：910 / 913

页数：4

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