A 70-GHz f(T) low operating bias self-aligned p-type SiGe MODFET

被引：33

作者：

Arafa, M

Ismail, K

Chu, JO

Meyerson, BS

Adesida, I

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] CAIRO UNIV,FAC ENGN,DEPT ELECT,GIZA 12211,EGYPT

[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 12期

基金：

美国国家科学基金会;

关键词：

Number:; ECD; 89-43166; Acronym:; NSF; Sponsor: National Science Foundation; -; IBM; Sponsor: International Business Machines Corporation; N00014-90-J-1270; UofI; Sponsor: University of Illinois;

D O I：

10.1109/55.545779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A self-aligned process for the fabrication of SiGe p-type modulation-doped field-effect transistors (MODFET's) is described, Self-aligned devices with 0.1-mu m gate-length have been fabricated and characterized, A maximum de extrinsic transconductance of 258 mS/mm was obtained with a low turn-on resistance and very low knee voltage, Excellent high frequency performance with a unity current-gain cutoff frequency (f(T)) of 70 GHz was obtained, This excellent high frequency performance was exhibited even at drain bias as low as 0.5 V.

引用

页码：586 / 588

页数：3

共 7 条

[1] High speed P-type SiGe modulation-doped field-effect transistors [J].