Very high-density (23 fF/μm2) RF MIM capacitors using high-k TaTiO as the dielectric

被引：70

作者：

Chiang, KC ^{[1
]}

Lai, CH

Chin, A

Wang, TJ

Chiu, HF

Chen, JR

McAlister, SP

Chi, CC

机构：

[1] Natl Chiao Tung Univ, Nano Sci Technol Ctr, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Natl Res Council Canada, Ottawa, ON, Canada

[4] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 10期

关键词：

capacitor; RF metal-insulator-metal (MIM); TaTiO;

D O I：

10.1109/LED.2005.856708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A very high density of 23 fF/mu m(2) has been measured in RF metal-insulator-metal (MIM) capacitors which use high-kappa TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MINI capacitors should be useful for precision RF circuits.

引用

页码：728 / 730

页数：3

共 20 条

[1] Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].

Babcock, JA ;

Balster, SG ;

Pinto, A ;

Dirnecker, C ;

Steinmann, P ;

Jumpertz, R ;

El-Kareh, B .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232

[2]

Chan KT, 2001, IEEE MTT S INT MICR, P763, DOI 10.1109/MWSYM.2001.967004

[3] Frequency-dependent capacitance reduction in high-k AlTiOx and Al2O3 gate dielectrics from IF to RF frequency range [J].

Chen, SB ;

Lai, CH ;

Chan, KT ;

Chin, A ;

Hsieh, JC ;

Liu, J .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (04) :203-205

[4] A study of MIMIM on-chip capacitor using Cu/SiO2 interconnect technology [J].

Chen, Z ;

Guo, LH ;

Yu, MB ;

Zhang, Y .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (07) :246-248

[5]

Chiang KC, 2005, 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P62

[6] The potential of functional scaling [J].

Chin, A ;

McAlister, SP .

IEEE CIRCUITS & DEVICES, 2005, 21 (01) :27-35

[7]

HU H, 2003, IEDM, P879

[8]

Huang CH, 2003, IEEE MTT S INT MICR, P507, DOI 10.1109/MWSYM.2003.1210987

[9] High-Q capacitors implemented in a CMOS process for low-power wireless applications [J].

Hung, CM ;

Ho, YC ;

Wu, IC ;

O, K .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (05) :505-511

[10]

Ishikawa T, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P940, DOI 10.1109/IEDM.2002.1175991

← 1 2 →