High critical current densities of YBa2Cu3O7-x thin films on buffered technical substrates

被引：31

作者：

Knierim, A ^{[1
]}

Auer, R ^{[1
]}

Geerk, J ^{[1
]}

Linker, G ^{[1
]}

Meyer, O ^{[1
]}

Reiner, H ^{[1
]}

Schneider, R ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM KARLSRUHE,ITP,D-76021 KARLSRUHE,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.118326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-axis oriented YBa2Cu3O7-x (YBCO) thin films were deposited on polycrystalline metallic tapes buffered with yttria stabilized zirconia (YSZ). The in-plane alignment of the YSZ layers achieved by simultaneous ion bombardment of the growing film (ion beam assisted deposition) and of the postdeposited YBCO thin films was studied by x-ray diffraction as a function of the buffer layer thickness. A significant improvement of the in-plane texture, achieved for buffer layers exceeding a thickness of about 1.5 mu m, resulted in high critical current densities above 10(6) A/cm(2) of the YBCO films. (C) 1997 American Institute of Physics.

引用

页码：661 / 663

页数：3

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