Highly selective spectral response with enhanced responsivity of n-ZnO/p-Si radial heterojunction nanowire photodiodes

被引：100

作者：

Um, Han-Don ^{[5
]}

Moiz, Syed Abdul ^{[4
]}

Park, Kwang-Tae ^{[5
]}

Jung, Jin-Young ^{[4
]}

Jee, Sang-Won ^{[4
]}

Ahn, Cheol Hyoun ^{[3
]}

Kim, Dong Chan ^{[3
]}

Cho, Hyung Koun ^{[3
]}

Kim, Dong-Wook ^{[1
,2
]}

Lee, Jung-Ho ^{[4
,5
]}

机构：

[1] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[2] Ewha Womans Univ, Dept Chem & Nano Sci, Seoul 120750, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

[4] Hanyang Univ, Dept Mat & Chem Engn, Ansan 426791, South Korea

[5] Hanyang Univ, Dept Bionano Technol, Ansan 426791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 03期

关键词：

SOLAR-CELLS; FILMS;

D O I：

10.1063/1.3543845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A radial heterojunction nanowire diode (RND) array consisting of a ZnO (shell)/Si (core) structure was fabricated using conformal coating of a n-type ZnO layer that surrounded a p-type Si nanowire. In both ultraviolet (UV) and visible ranges, the photoresponsivity of the RND was larger than that of a planar thin film diode (PD) owing to the efficient carrier collection with improved light absorption. Compared to a PD, in the forward bias, a 6 mu m long RND resulted in a similar to 2.7 times enhancement of the UV responsivity at lambda = 365 nm, which could be explained based on the oxygen-related hole-trap mechanism. Under a reverse bias, UV-blind visible detection was observed while the UV response was suppressed. (c) 2011 American Institute of Physics. [doi:10.1063/1.3543845]

引用

页数：3

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