Contactless electro-reflectance study of interdiffusion in heat-treated GaAs1-xSbx/GaAs single quantum wells

被引：7

作者：

Ghosh, S

Arora, BM

Homewood, KP

Gillin, WP

Khreis, OM

Singer, KE

机构：

[1] Tata Inst Fundamental Res, Solid State Elect Grp, Bombay 400005, Maharashtra, India

[2] Univ Surrey, Sch Elect Engn Informat Technol & Math, Guildford GU2 5XH, Surrey, England

[3] Univ London Queen Mary & Westfield Coll, Dept Phys, London E1 4NS, England

[4] Yarmouk Univ, Hijawi Fac Engn & Technol, Irbid, Jordan

[5] Univ Manchester, Inst Sci & Technol, Dept Elect Engn & Elect, Manchester M60 1QD, Lancs, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 43期

关键词：

D O I：

10.1088/0953-8984/10/43/031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the interdiffusion process on the group V sublattice in thermally annealed, undoped GaAs1-xSbx/GaAs strained single quantum wells by comparing the results of contactless electro-reflectance spectroscopy with theoretically estimated optical transition energies. We show that the interdiffusion process in this system is Fickian. We estimate the activation energy for the interdiffusion process to be 1.5 +/- 0.2 eV, which is low compared to those reported for other III-V-alloy-based heterostructures.

引用

页码：9865 / 9874

页数：10

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