A micromachining post-process module for RF silicon technology

被引：25

作者：

Pham, NP ^{[1
]}

Ng, KT ^{[1
]}

Bartek, M ^{[1
]}

Sarro, PM ^{[1
]}

Rejaei, B ^{[1
]}

Burghartz, JN ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, Lab Elect Components Technol & Mat, ECTM, NL-2628 CT Delft, Netherlands

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904360

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bulk-micromachining post-process module, based on two-level structuring of RF silicon substrates and a 4-mum thick one-level sub-surface metal pattern, is presented. This allows for fabricating three-dimensional structures for novel RF components and has potential in more compact integration. Next to a concise description of the relevant aspects of the fabrication process, mechanical stability of the postprocessed wafers is analyzed. Sub-surface spiral inductors with good quality and low coupling to inductors built at the wafer surface are presented, thus demonstrating the feasibility of three-dimensional integration of RF components.

引用

页码：481 / 484

页数：4

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