Highly efficient electron emission diode of single-crystalline chemical-vapor-deposition diamond

被引：11

作者：

Nishimura, M ^{[1
]}

Hatta, A ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Osaka Univ, Dept Elect Engn, Osaka 5650871, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 9AB期

关键词：

homoepitaxial diamond film; CVD; ion implantation; cold cathode; electron emitter; diode; efficiency;

D O I：

10.1143/JJAP.37.L1011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel type of flat electron emission diode with a high emission efficiency has been fabricated using single crystalline diamond thin films homoepitaxially grown on thick high-pressure-synthesized diamond. For the formation of the buried electrode, 180-keV N+ ions were implanted into the homoepitaxial layer grown by microwave plasma chemical-vapor-deposition (CVD) method to a dose 1 x 10(16) ions/cm(2) at room temperature. Since this process created a significant damage in the specimen surface layer working as the electron emission surface, a high quality diamond layer was subsequently overgrown to recover the damaged surface. Applying voltages of sub-kV between the hydrogenated surface and the buried electrode results in an efficient electron emission (>10%).

引用

页码：L1011 / L1013

页数：3

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