Growth and characterization of diamond films deposited by dc discharge assisted hot filament chemical vapor deposition

被引：7

作者：

Cui, JB ^{[1
]}

Shang, NG

Liao, Y

Li, JQ

Fang, RC

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 334卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

diamond growth; discharge process; chemical vapor deposition;

D O I：

10.1016/S0040-6090(98)01135-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diamond films have been deposited by d.c. discharge assisted hot filament chemical vapor deposition. The diamond nucleation density was significantly enhanced more than five orders of magnitude by this d.c. discharge assisted process. The effects of deposition parameters including deposition time, temperature, and discharge current on the diamond growth and gas phase composition were studied by Raman scattering, scanning electron microscopy, and optical emission spectroscopy. The mechanisms of the discharge enhanced nucleation of diamond are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：156 / 160

页数：5

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